검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Refractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells Ochoa-Martinez E, Barrutia L, Ochoa M, Barrigon E, Garcia I, Rey-Stolle I, Algora C, Basa P, Kronome G, Gabas M Solar Energy Materials and Solar Cells, 174, 388, 2018 |
| 2 |
Optical characterization of the coloration process in electrochromic amorphous and crystalline WO3 films by spectroscopic ellipsometry Yuan GZ, Hua CZ, Huang L, Defranoux C, Basa P, Liu Y, Song CL, Han GR Applied Surface Science, 421, 630, 2017 |
| 3 |
Homogeneous transparent conductive ZnO:Ga by ALD for large LED wafers Szabo Z, Baji Z, Basa P, Czigany Z, Barsony I, Wang HY, Volk J Applied Surface Science, 379, 304, 2016 |
| 4 |
Study of annealing effects upon the optical and electrical properties of SnO2:F/SiCxOy low emissivity coatings by spectroscopic ellipsometry Wang KK, Cheng B, Wu B, Defranoux C, Basa P, Song CL, Han GR, Liu Y Thin Solid Films, 571, 720, 2014 |
| 5 |
Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals Horvath ZJ, Basa P, Jaszi T, Molnar KZ, Pap AE, Molnar G Applied Surface Science, 269, 23, 2013 |
| 6 |
Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals Basa P, Alagoz AS, Lohner T, Kulakci M, Turan R, Nagy K, Horvath ZJ Applied Surface Science, 254(12), 3626, 2008 |
| 7 |
Ellipsometric characterization of nanocrystals in porous silicon Petrik P, Fried M, Vazsonyi E, Lohner T, Horvath E, Polgar O, Basa P, Barsony I, Gyulai J Applied Surface Science, 253(1), 200, 2006 |
| 8 |
Electrical and optical properties of Si-rich SiN, layers: Effect of annealing Szollosi P, Basa P, Ducso C, Mate B, Adam M, Lohner T, Petrik P, Pecz B, Toth L, Dobos L, Dozsa L, Horvath ZJ Current Applied Physics, 6(2), 179, 2006 |