화학공학소재연구정보센터
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No. Article
1 Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing
Bastos KP, Miotti L, Lucovsky G, Chung KB, Nordlund D
Journal of Vacuum Science & Technology A, 28(4), 662, 2010
2 Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy
Miotti L, Bastos KP, Lucovsky G, Radtke C, Nordlund D
Journal of Vacuum Science & Technology A, 28(4), 693, 2010
3 Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3
Lucovsky G, Chung KB, Miotti L, Bastos KP, Amado C, Schlom D
Solid-State Electronics, 53(12), 1273, 2009
4 Electrical properties and interfacial characteristics of RuO2/HfAlOx/SiON/Si and RuO2/LaAlO3/SiON/Si capacitors
Edon V, Li Z, Hugon MC, Krug C, Bastos KP, Miotti L, Baumvol IJR, Cardinaud C, Durand O, Eypert C
Journal of the Electrochemical Society, 155(9), H661, 2008
5 Thermally induced atomic transport in nanometric LaAlON films on Si
Bastos KP, Salvador L, Krug C, Edon V, Hugon MC, Agius B, Baumvol IJR
Electrochemical and Solid State Letters, 10(10), G69, 2007
6 Thermal stability and electrical characterization of HfO2 films on thermally nitrided Si
Bastos KP, Morais J, Miotti L, Soares GV, Pezzi RP, da Silva RCG, Boudinov H, Baumvol IJR, Hegde RI, Tseng HH, Tobinc PJ
Journal of the Electrochemical Society, 151(6), F153, 2004
7 Thermal behavior of hafnium-based ultrathin films on silicon
Pezzi RP, Morais J, Dahmen SR, Bastos KP, Miotti L, Soares GV, Baumvol IJR, Freire FL
Journal of Vacuum Science & Technology A, 21(4), 1424, 2003