| 1 |
Consistent low-field mobility modeling for advanced MOS devices
Stanojevic Z, Baumgartner O, Filipovic L, Kosina H, Karner M, Kernstock C, Prause P
Solid-State Electronics, 112, 37, 2015 |
| 2 |
Subband splitting and surface roughness induced spin relaxation in (001) silicon SOI MOSFETs
Osintsev D, Baumgartner O, Stanojevic Z, Sverdlov V, Selberherr S
Solid-State Electronics, 90, 34, 2013 |
| 3 |
Bandstructure and mobility variations in p-type silicon nanowires under electrostatic gate field
Neophytou N, Baumgartner O, Stanojevic Z, Kosina H
Solid-State Electronics, 90, 44, 2013 |
| 4 |
Subband engineering in n-type silicon nanowires using strain and confinement
Stanojevic Z, Sverdlov V, Baumgartner O, Kosina H
Solid-State Electronics, 70, 73, 2012 |
| 5 |
Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 1 analytical consideration and strain-induced valley splitting
Windbacher T, Sverdlov V, Baumgartner O, Selberherr S
Solid-State Electronics, 54(2), 137, 2010 |
| 6 |
Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 2 efficient self-consistent numerical solution of the k . p schrodinger equation
Baumgartner O, Karner M, Sverdlov V, Kosina H
Solid-State Electronics, 54(2), 143, 2010 |
