검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors Charles M, Baines Y, Bavard A, Bouveyron R Journal of Crystal Growth, 483, 89, 2018 |
| 2 |
Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN films Cordier Y, Frayssinet E, Portail M, Zielinski M, Chassagne T, Korytov M, Courville A, Roy S, Nemoz M, Chmielowska M, Vennegues P, Schenk HPD, Kennard M, Bavard A, Rondi D Journal of Crystal Growth, 398, 23, 2014 |