검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy Beaudoin M, Lewis RB, Andrews JJ, Bahrami-Yekta V, Masnadi-Shirazi M, O'Leary SK, Tiedje T Journal of Crystal Growth, 425, 245, 2015 |
| 2 |
Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy Beaudoin M, Chan ICW, Beaton D, Elouneg-Jamroz M, Tiedje T, Whitwick M, Young EC, Young JF, Zangenberg N Journal of Crystal Growth, 311(7), 1662, 2009 |
| 3 |
Real-time composition control of InAlAs grown on InP using spectroscopic ellipsometry Beaudoin M, Grassi E, Johnson SR, Ramaswamy K, Tsakalis K, Alford TL, Zhang YH Journal of Vacuum Science & Technology B, 18(3), 1435, 2000 |
| 4 |
Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs Johnson SR, Dowd P, Braun W, Koelle U, Ryu CM, Beaudoin M, Guo CZ, Zhang YH Journal of Vacuum Science & Technology B, 18(3), 1545, 2000 |
| 5 |
Temperature-composition determination based on modeling of optical constants of III-V compound semiconductors measured by spectroscopic ellipsometry Grassi E, Johnson SR, Beaudoin M, Tsakalis KS Journal of Vacuum Science & Technology B, 17(3), 1223, 1999 |
| 6 |
Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layers Beaudoin M, Johnson SR, Boonzaayer MD, Zhang YH, Johs B Journal of Vacuum Science & Technology B, 17(3), 1233, 1999 |
| 7 |
Closed-loop control of composition and temperature during the growth of InGaAs lattice matched to InP Johnson SR, Grassi E, Beaudoin M, Boonzaayer MD, Tsakalis KS, Zhang YH Journal of Vacuum Science & Technology B, 17(3), 1237, 1999 |
| 8 |
Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001) Guillon S, Yip RYF, Desjardins P, Chicoine M, Bougrioua Z, Beaudoin M, Ait-Ouali A, Masut RA Journal of Vacuum Science & Technology A, 16(2), 781, 1998 |