| 1 |
Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition
Bell KA, Ebert M, Yoo SD, Flock K, Aspnes DE
Journal of Vacuum Science & Technology A, 18(4), 1184, 2000 |
| 2 |
In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy
Ebert M, Bell KA, Yoo SD, Flock K, Aspnes DE
Thin Solid Films, 364(1-2), 22, 2000 |
| 3 |
Photon-induced localization and final-state correlation effects in optically absorbing materials
Aspnes DE, Mantese L, Bell KA, Rossow U
Journal of Vacuum Science & Technology B, 16(4), 2367, 1998 |
| 4 |
Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometry
Bell KA, Mantese L, Rossow U, Aspnes DE
Thin Solid Films, 313-314, 161, 1998 |
| 5 |
Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states
Mantese L, Bell KA, Rossow U, Aspnes DE
Thin Solid Films, 313-314, 557, 1998 |
| 6 |
Evidence of Near-Surface Localization of Excited Electronic States in Crystalline Si
Mantese L, Bell KA, Rossow U, Aspnes DE
Journal of Vacuum Science & Technology B, 15(4), 1196, 1997 |
| 7 |
Surface and Interface Effects on Ellipsometric Spectra of Crystalline Si
Bell KA, Mantese L, Rossow U, Aspnes DE
Journal of Vacuum Science & Technology B, 15(4), 1205, 1997 |
