화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Investigation of carbon-doped base materials grown by CBE for Al-free InPHBTs
Benchimol JL, Mba J, Sermage B, Riet M, Blayac S, Berdaguer P, Duchenois AM, Andre P, Thuret J, Gonzalez C, Konczykowska A
Journal of Crystal Growth, 209(2-3), 476, 2000
2 TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
Patriarche G, Glas F, Le Roux G, Largeau L, Mereuta A, Ougazzaden A, Benchimol JL
Journal of Crystal Growth, 221, 12, 2000
3 High Growth-Rate of III-V Compounds by Free-Carrier Gas Chemical Beam Epitaxy
Benchimol JL, Juhel M, Petitjean M, Ancilotti A
Journal of Vacuum Science & Technology B, 13(1), 55, 1995