검색결과 : 7건
No. | Article |
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1 |
Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling Racko J, Benko P, Mikolasek M, Granzner R, Kittler M, Schwierz F, Harmatha L, Breza J Applied Surface Science, 395, 122, 2017 |
2 |
The effectiveness of muncipal sewage treatment with archaea in sequence biological reactors and Bardenpho systems Anielak AM, Zaba T, Polus M, Benko P, Bochnia T, Luszczek B Przemysl Chemiczny, 95(2), 314, 2016 |
3 |
Biodiversity of activated sludge bioaugmented with archaea or operated in presence of external carbon source Wozniakiewicz T, Benko P, Anielak AM, Zaba T Przemysl Chemiczny, 94(12), 2251, 2015 |
4 |
A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times Racko J, Benko P, Hotovy I, Harmatha L, Mikolasek M, Granzner R, Kittler M, Schwierz F, Breza J Applied Surface Science, 312, 68, 2014 |
5 |
Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure Harmatha L, Stuchlikova L, Racko J, Marek J, Pechacek J, Benko P, Nemec M, Breza J Applied Surface Science, 312, 102, 2014 |
6 |
Electrical characterization of the A(III)B(V)-N heterostructures by capacitance methods Stuchlikova L, Harmatha L, Petrus M, Rybar J, Sebok J, Sciana B, Radziewicz D, Pucicki D, Tlaczala M, Kosa A, Benko P, Kovac J, Juhasz P Applied Surface Science, 269, 175, 2013 |
7 |
Unified tunnelling-diffusion theory for Schottky and very thin MOS structures Racko J, Valent P, Benko P, Donoval D, Harmatha L, Pintes P, Breza J Solid-State Electronics, 52(11), 1755, 2008 |