화학공학소재연구정보센터
검색결과 : 34건
No. Article
1 Strained InGaAs/InAlAs quantum wells for complementary III-V transistors
Bennett BR, Chick TF, Boos JB, Champlain JG, Podpirka AA
Journal of Crystal Growth, 388, 92, 2014
2 Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy
Podpirka AA, Twigg ME, Tischler JG, Magno R, Bennett BR
Journal of Crystal Growth, 404, 122, 2014
3 Enhanced hole mobility and density in GaSb quantum wells
Bennett BR, Chick TF, Ancona MG, Boos JB
Solid-State Electronics, 79, 274, 2013
4 Study of Shubnikov-de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1-XSb quantum wells
Nainani A, Irisawa T, Bennett BR, Boos JB, Ancona MG, Saraswat KC
Solid-State Electronics, 62(1), 138, 2011
5 Scaling projections for Sb-based p-channel FETs
Ancona MG, Bennett BR, Boos JB
Solid-State Electronics, 54(11), 1349, 2010
6 Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits
Bennett BR, Ancona MG, Champlain JG, Papanicolaou NA, Boos JB
Journal of Crystal Growth, 312(1), 37, 2009
7 Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors
Bennett BR, Ancona MG, Boos JB, Canedy CB, Khan SA
Journal of Crystal Growth, 311(1), 47, 2008
8 Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb
Jefferson PH, Buckle L, Bennett BR, Veal TD, Walker D, Wilson NR, Piper LFJ, Thomas PA, Ashley T, McConville CF
Journal of Crystal Growth, 304(2), 338, 2007
9 InAs/AlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications
Lange MD, Tsai RS, Deal WR, Nam PS, Lee LJ, Sandhu RS, Hsing R, Poust BD, Kraus JL, Gutierrez-Aitken AL, Bennett BR, Boos JB, Noori AM, Hayashi SL, Goorsky MS
Journal of Vacuum Science & Technology B, 24(6), 2581, 2006
10 Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures
Robinson JA, Mohney SE, Boos JB, Tinkham BP, Bennett BR
Solid-State Electronics, 50(3), 429, 2006