검색결과 : 34건
No. | Article |
---|---|
1 |
Strained InGaAs/InAlAs quantum wells for complementary III-V transistors Bennett BR, Chick TF, Boos JB, Champlain JG, Podpirka AA Journal of Crystal Growth, 388, 92, 2014 |
2 |
Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy Podpirka AA, Twigg ME, Tischler JG, Magno R, Bennett BR Journal of Crystal Growth, 404, 122, 2014 |
3 |
Enhanced hole mobility and density in GaSb quantum wells Bennett BR, Chick TF, Ancona MG, Boos JB Solid-State Electronics, 79, 274, 2013 |
4 |
Study of Shubnikov-de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1-XSb quantum wells Nainani A, Irisawa T, Bennett BR, Boos JB, Ancona MG, Saraswat KC Solid-State Electronics, 62(1), 138, 2011 |
5 |
Scaling projections for Sb-based p-channel FETs Ancona MG, Bennett BR, Boos JB Solid-State Electronics, 54(11), 1349, 2010 |
6 |
Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits Bennett BR, Ancona MG, Champlain JG, Papanicolaou NA, Boos JB Journal of Crystal Growth, 312(1), 37, 2009 |
7 |
Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors Bennett BR, Ancona MG, Boos JB, Canedy CB, Khan SA Journal of Crystal Growth, 311(1), 47, 2008 |
8 |
Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb Jefferson PH, Buckle L, Bennett BR, Veal TD, Walker D, Wilson NR, Piper LFJ, Thomas PA, Ashley T, McConville CF Journal of Crystal Growth, 304(2), 338, 2007 |
9 |
InAs/AlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications Lange MD, Tsai RS, Deal WR, Nam PS, Lee LJ, Sandhu RS, Hsing R, Poust BD, Kraus JL, Gutierrez-Aitken AL, Bennett BR, Boos JB, Noori AM, Hayashi SL, Goorsky MS Journal of Vacuum Science & Technology B, 24(6), 2581, 2006 |
10 |
Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures Robinson JA, Mohney SE, Boos JB, Tinkham BP, Bennett BR Solid-State Electronics, 50(3), 429, 2006 |