검색결과 : 42건
| No. | Article |
|---|---|
| 1 |
The influence of growth conditions on carrier lifetime in 4H-SiC epilayers Lilja L, Booker ID, ul Hassan J, Janzen E, Bergman JP Journal of Crystal Growth, 381, 43, 2013 |
| 2 |
Characterization of the carrot defect in 4H-SiC epitaxial layers Hassan J, Henry A, McNally PJ, Bergman JP Journal of Crystal Growth, 312(11), 1828, 2010 |
| 3 |
On-axis homoepitaxial growth on Si-face 4H-SiC substrates Hassan J, Bergman JP, Henry A, Janzen E Journal of Crystal Growth, 310(20), 4424, 2008 |
| 4 |
In-situ surface preparation of nominally on-axis 4H-SiC substrates Hassan J, Bergman JP, Henry A, Janzen E Journal of Crystal Growth, 310(20), 4430, 2008 |
| 5 |
Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile Hassan JU, Henry A, Bergman JP, Janzen E Thin Solid Films, 515(2), 460, 2006 |
| 6 |
SiC and ill-nitride growth in a hot-wall CVD reactor Janzen E, Bergman JP, Danielsson O, Forsberg U, Hallin C, Ul Hassan J, Henry A, Ivanov IG, Kakanakova-Georgieva A, Persson P, ul Wahab Q Materials Science Forum, 483, 61, 2005 |
| 7 |
Recombination enhanced defect annealing in 4H-SiC Storasta L, Carlsson FHC, Bergman JP, Janzen E Materials Science Forum, 483, 369, 2005 |
| 8 |
Optical studies of nonequilibrium carrier dynamics in highly excited 4H-SiC epitaxial layers Neimontas K, Aleksiejunas R, Sudzius M, Jarasiunas K, Bergman JP Materials Science Forum, 483, 413, 2005 |
| 9 |
Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers Buyanova IA, Bergman JP, Chen WM, Thaler G, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F, Kyrychenko FV, Stanton CJ, Pan CC, Chen GT, Chyi J, Zavada JM Journal of Vacuum Science & Technology B, 22(6), 2668, 2004 |
| 10 |
SiC crystal growth by HTCVD Ellison A, Magnusson B, Sundqvist B, Pozina G, Bergman JP, Janzen E, Vehanen A Materials Science Forum, 457-460, 9, 2004 |