화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors
Bergunde T, Henninger B, Lunenburger M, Heuken M, Weyers M, Zettler JT
Journal of Crystal Growth, 248, 235, 2003
2 Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor
Dauelsberg M, Kadinski L, Makarov YN, Bergunde T, Strauch G, Weyers M
Journal of Crystal Growth, 208(1-4), 85, 2000
3 Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor
Brunner F, Bergunde T, Richter E, Kurpas P, Achouche M, Maassdorf A, Wurfl J, Weyers M
Journal of Crystal Growth, 221, 53, 2000