검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Conductive filament structure in HfO2 resistive switching memory devices Privitera S, Bersuker G, Lombardo S, Bongiorno C, Gilmer DC Solid-State Electronics, 111, 161, 2015 |
| 2 |
Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY Solid-State Electronics, 82, 82, 2013 |
| 3 |
RTS noise characterization of HfOx RRAM in high resistive state Puglisi FM, Pavan P, Padovani A, Larcher L, Bersuker G Solid-State Electronics, 84, 160, 2013 |
| 4 |
Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY Solid-State Electronics, 86, 75, 2013 |
| 5 |
Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK Thin Solid Films, 520(7), 3091, 2012 |
| 6 |
A study of highly crystalline novel beryllium oxide film using atomic layer deposition Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK Journal of Crystal Growth, 334(1), 126, 2011 |
| 7 |
Scanning Tunneling Microscopy Study of the Multi-Step Deposited and Annealed HfSiOx Gate Dielectric Yew KS, Ang DS, Tang LJ, Cui K, Bersuker G, Lysaght PS Journal of the Electrochemical Society, 158(10), H1021, 2011 |
| 8 |
Grain boundary-driven leakage path formation in HfO2 dielectrics Bersuker G, Yum J, Vandelli L, Padovani A, Larcher L, Iglesias V, Porti M, Nafria M, McKenna K, Shluger A, Kirsch P, Jammy R Solid-State Electronics, 65-66, 146, 2011 |
| 9 |
Impact of Oxygen on Work Function of Ru Oxide Metal Gate Park CS, Bersuker G, Hung PY, Kirsch PD, Jammy R Electrochemical and Solid State Letters, 13(4), H105, 2010 |
| 10 |
Identification of interfacial defects in high-k gate stack films by spectroscopic ellipsometry Price J, Bersuker G, Lysaght PS Journal of Vacuum Science & Technology B, 27(1), 310, 2009 |