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| No. | Article |
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| 1 |
In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy Cordier Y, Baron N, Semond F, Massies J, Binetti M, Henninger B, Besendahl M, Zettler T Journal of Crystal Growth, 301, 71, 2007 |