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| No. | Article |
|---|---|
| 1 |
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T Journal of Crystal Growth, 510, 18, 2019 |