검색결과 : 6건
No. | Article |
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1 |
Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon Anindya KN, Islam MS, Park J, Bhuiyan AG, Hashimoto A Current Applied Physics, 20(4), 572, 2020 |
2 |
MOVPE growth of high quality p-type InGaN with intermediate In compositions Sasamoto K, Hotta T, Sugita K, Bhuiyan AG, Hashimoto A, Yamamoto A, Kinoshita K, Kohji Y Journal of Crystal Growth, 318(1), 492, 2011 |
3 |
MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content Sugita K, Tanaka M, Sasamoto K, Bhuiyan AG, Hashimoto A, Yamamoto A Journal of Crystal Growth, 318(1), 505, 2011 |
4 |
Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization Hasan MT, Bhuiyan AG, Yamamoto A Solid-State Electronics, 52(1), 134, 2008 |
5 |
High temperature growth of InN on GaP(111)B substrate using a new two-step growth method Bhuiyan AG, Yamamoto A, Hashimoto A, Ito Y Journal of Crystal Growth, 236(1-3), 59, 2002 |
6 |
Nitridation effects of GaP(111)B substrate on MOCVD growth of InN Bhuiyan AG, Hashimoto A, Yamamoto A, Ishigami R Journal of Crystal Growth, 212(3-4), 379, 2000 |