화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon
Anindya KN, Islam MS, Park J, Bhuiyan AG, Hashimoto A
Current Applied Physics, 20(4), 572, 2020
2 MOVPE growth of high quality p-type InGaN with intermediate In compositions
Sasamoto K, Hotta T, Sugita K, Bhuiyan AG, Hashimoto A, Yamamoto A, Kinoshita K, Kohji Y
Journal of Crystal Growth, 318(1), 492, 2011
3 MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content
Sugita K, Tanaka M, Sasamoto K, Bhuiyan AG, Hashimoto A, Yamamoto A
Journal of Crystal Growth, 318(1), 505, 2011
4 Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization
Hasan MT, Bhuiyan AG, Yamamoto A
Solid-State Electronics, 52(1), 134, 2008
5 High temperature growth of InN on GaP(111)B substrate using a new two-step growth method
Bhuiyan AG, Yamamoto A, Hashimoto A, Ito Y
Journal of Crystal Growth, 236(1-3), 59, 2002
6 Nitridation effects of GaP(111)B substrate on MOCVD growth of InN
Bhuiyan AG, Hashimoto A, Yamamoto A, Ishigami R
Journal of Crystal Growth, 212(3-4), 379, 2000