| 1 |
Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures
Gullu O, Baris O, Biber M, Turut A
Applied Surface Science, 254(10), 3039, 2008 |
| 2 |
DNA-based organic-on-inorganic semiconductor Schottky structures
Gullu O, Cankaya M, Baris O, Biber M, Ozdemir H, Gulluce M, Turut A
Applied Surface Science, 254(16), 5175, 2008 |
| 3 |
Effects of the barrier metal thickness and hydrogen pre-annealing on the characteristic parameters of Au/n-GaAs metal-semiconductor Schottky contacts
Gullu O, Biber M, Van Meirhaeghe RL, Turut A
Thin Solid Films, 516(21), 7851, 2008 |
| 4 |
Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature
Gullu O, Biber M, Duman S, Turut A
Applied Surface Science, 253(17), 7246, 2007 |
| 5 |
The effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure
Saglam M, Biber M, Cakar M, Turut A
Applied Surface Science, 230(1-4), 404, 2004 |
| 6 |
Temperature dependence of current-voltage characteristics of Sn/p-GaTe Schottky diodes
Coskun C, Biber M, Efeoglu H
Applied Surface Science, 211(1-4), 360, 2003 |
| 7 |
Conductance and capacitance-frequency characteristics of polypyrrole/p-type silicon structures
Cakar M, Biber M, Saglam M, Turut A
Journal of Polymer Science Part B: Polymer Physics, 41(12), 1334, 2003 |
| 8 |
Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process
Biber M, Termirci C, Turut A
Journal of Vacuum Science & Technology B, 20(1), 10, 2002 |
