검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
71 W (19.7 W/mm) SiC BJTs for long-pulse UHF radar applications Zhao F Solid-State Electronics, 53(11), 1169, 2009 |
| 2 |
High power(500V-70A) and high gain(44-47) 4H-SiC bipolar junction transistors Zhang J, Alexandrov P, Zhao JH Materials Science Forum, 457-460, 1149, 2004 |
| 3 |
A 500V, very high current gain (beta=1517) 4H-SiC bipolar Darlington transistor Zhang J, Alexandrov P, Zhao JH Materials Science Forum, 457-460, 1165, 2004 |
| 4 |
A high voltage (1570V) 4H-SiC bipolar Darlington with current gain beta > 640 and tested in a half-bridge inverter up to 20A at V-Bus=900V Zhao JH, Zhang J, Alexandrov P, Burke T Materials Science Forum, 457-460, 1169, 2004 |
| 5 |
A high voltage (1,750V) and high current gain (beta=24.8) 4H-SiC bipolar junction transistor using a thin (12 mu m) drift layer Zhao JH, Zhang J, Alexandrov P, Li X, Burke T Materials Science Forum, 457-460, 1173, 2004 |