검색결과 : 9건
No. | Article |
---|---|
1 |
Silicon EFG process development by multiscale modeling Muller M, Birkmann B, Mosel F, Westram I, Seidl A Journal of Crystal Growth, 312(8), 1397, 2010 |
2 |
3D unsteady analysis of melt flow and segregation during EFG Si crystal growth Smirnova OV, Kalaev VV, Seidl A, Birkmann B Journal of Crystal Growth, 310(7-9), 2209, 2008 |
3 |
Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia Sun G, Meissner E, Hussy S, Birkmann B, Friedrich J, Muller G Journal of Crystal Growth, 292(2), 201, 2006 |
4 |
Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN Birkmann B, Hussy S, Sun G, Berwian P, Meissner E, Friedrich J, Muller G Journal of Crystal Growth, 297(1), 133, 2006 |
5 |
Investigation of residual dislocations in VGF-grown Si-doped GaAs Birkmann B, Stenzenberger J, Jurisch M, Hartwig J, Alex V, Muller G Journal of Crystal Growth, 276(3-4), 335, 2005 |
6 |
Analysis of silicon incorporation into VGF-grown GaAs Birkmann B, Weingartner R, Wellmann P, Wiedemann B, Muller G Journal of Crystal Growth, 237, 345, 2002 |
7 |
Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling Muller G, Birkmann B Journal of Crystal Growth, 237, 1745, 2002 |
8 |
Anomalous interface shapes in the seed well during vertical gradient freeze growth of Si-doped GaAs Rasp M, Birkmann B, Muller G Journal of Crystal Growth, 222(1-2), 88, 2001 |
9 |
Growth of 3'' and 4'' gallium arsenide crystals by the vertical gradient freeze (VGF) method Birkmann B, Rasp M, Stenzenberger J, Muller G Journal of Crystal Growth, 211(1-4), 157, 2000 |