화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Silicon EFG process development by multiscale modeling
Muller M, Birkmann B, Mosel F, Westram I, Seidl A
Journal of Crystal Growth, 312(8), 1397, 2010
2 3D unsteady analysis of melt flow and segregation during EFG Si crystal growth
Smirnova OV, Kalaev VV, Seidl A, Birkmann B
Journal of Crystal Growth, 310(7-9), 2209, 2008
3 Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia
Sun G, Meissner E, Hussy S, Birkmann B, Friedrich J, Muller G
Journal of Crystal Growth, 292(2), 201, 2006
4 Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN
Birkmann B, Hussy S, Sun G, Berwian P, Meissner E, Friedrich J, Muller G
Journal of Crystal Growth, 297(1), 133, 2006
5 Investigation of residual dislocations in VGF-grown Si-doped GaAs
Birkmann B, Stenzenberger J, Jurisch M, Hartwig J, Alex V, Muller G
Journal of Crystal Growth, 276(3-4), 335, 2005
6 Analysis of silicon incorporation into VGF-grown GaAs
Birkmann B, Weingartner R, Wellmann P, Wiedemann B, Muller G
Journal of Crystal Growth, 237, 345, 2002
7 Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling
Muller G, Birkmann B
Journal of Crystal Growth, 237, 1745, 2002
8 Anomalous interface shapes in the seed well during vertical gradient freeze growth of Si-doped GaAs
Rasp M, Birkmann B, Muller G
Journal of Crystal Growth, 222(1-2), 88, 2001
9 Growth of 3'' and 4'' gallium arsenide crystals by the vertical gradient freeze (VGF) method
Birkmann B, Rasp M, Stenzenberger J, Muller G
Journal of Crystal Growth, 211(1-4), 157, 2000