| 1 |
Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth
Puustinen J, Hilska J, Guina M
Journal of Crystal Growth, 511, 33, 2019 |
| 2 |
Isomorphous substitutions in sillenite-family single-crystal Bi-24(M2-xMnx4+) O-40 solid solutions (M = Al3+, Fe3+, Ge4+, Ti4+, Cr4+, V5+)
Kuz'micheva GM, Mel'nikova TI, Kaurova IA, Zubavichus YV, Nikolaychik VI
Journal of Crystal Growth, 507, 413, 2019 |
| 3 |
Epitaxial phases of high Bi content GaSbBi alloys
Hilska J, Koivusalo E, Puustinen J, Suomalainen S, Guina M
Journal of Crystal Growth, 516, 67, 2019 |
| 4 |
Spinodal decomposition ranges of bismide semiconductor alloys
Elyukhin VA
Journal of Crystal Growth, 515, 53, 2019 |
| 5 |
Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE
Beaton DA, Steger M, Christian T, Mascarenhas A
Journal of Crystal Growth, 484, 7, 2018 |
| 6 |
Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as single source precursor
Bendt G, Gassa S, Rieger F, Jooss C, Schulz S
Journal of Crystal Growth, 490, 77, 2018 |
| 7 |
Spontaneous nanostructure formation in GaAsBi alloys
Tait CR, Yan LF, Millunchick JM
Journal of Crystal Growth, 493, 20, 2018 |
| 8 |
Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1-yBiy on offcut and mesa-patterned GaAs substrates
Guan YX, Forghani K, Kim H, Babcock SE, Mawst LJ, Kuech TF
Journal of Crystal Growth, 464, 39, 2017 |
| 9 |
Exploiting strain to enhance the Si incorporation in GaAs-based III/V semiconductors using MOVPE
Nattermann L, Ludewig P, Sterzer E, Volz K
Journal of Crystal Growth, 470, 15, 2017 |
| 10 |
Bismuth amides as promising ALD precursors for Bi2Te3 films
Rusek M, Komossa T, Bendt G, Schulz S
Journal of Crystal Growth, 470, 128, 2017 |
