검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Mechanisms of crystallization of bulk GaN from the solution under high N-2 pressure Grzegory I, Bockowski M, Lucznik B, Krukowski S, Romanowski Z, Wroblewski M, Porowski S Journal of Crystal Growth, 246(3-4), 177, 2002 |
| 2 |
Growth and characterization of low defect GaN by hydride vapor phase epitaxy Xu XP, Vaudo RP, Loria C, Salant A, Brandes GR, Chaudhuri J Journal of Crystal Growth, 246(3-4), 223, 2002 |
| 3 |
Vacancies as compensating centers in bulk GaN: doping effects Saarinen K, Ranki V, Suski T, Bockowski M, Grzegory I Journal of Crystal Growth, 246(3-4), 281, 2002 |