검색결과 : 30건
| No. | Article |
|---|---|
| 1 |
Analysis of InAsSb/GaAs submonolayer stacks Quandt D, Blasing J, Strittmatter A Journal of Crystal Growth, 494, 1, 2018 |
| 2 |
Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping Berger C, Lesnik A, Zettler T, Schmidt G, Veit P, Dadgar A, Blasing J, Christen J, Strittmatter A Journal of Crystal Growth, 440, 6, 2016 |
| 3 |
Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality Berger C, Dadgar A, Blasing J, Lesnik A, Veit P, Schmidt G, Hempel T, Christen J, Krost A, Strittmatter A Journal of Crystal Growth, 414, 105, 2015 |
| 4 |
In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range Berger C, Dadgar A, Blasing J, Krost A Journal of Crystal Growth, 370, 87, 2013 |
| 5 |
Anisotropic bow and plastic deformation of GaN on silicon Dadgar A, Fritze S, Schulz O, Hennig J, Blasing J, Witte H, Diez A, Heinle U, Kunze M, Daumiller I, Haberland K, Krost A Journal of Crystal Growth, 370, 278, 2013 |
| 6 |
Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces Reiher F, Dadgar A, Blasing J, Wieneke M, Krost A Journal of Crystal Growth, 312(2), 180, 2010 |
| 7 |
Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates Schulze F, Kisel O, Dadgar A, Krtschil A, Blasing J, Kunze M, Daumiller I, Hempel T, Diez A, Clos R, Christen J, Krost A Journal of Crystal Growth, 299(2), 399, 2007 |
| 8 |
Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode Heinze S, Krtschil A, Blasing J, Hempel T, Veit P, Dadgar A, Christen J, Krost A Journal of Crystal Growth, 308(1), 170, 2007 |
| 9 |
MOVPE growth of GaN on Si - Substrates and strain Dadgar A, Veit P, Schulze F, Blasing J, Krtschil A, Witte H, Diez A, Hempel T, Christen J, Clos R, Krost A Thin Solid Films, 515(10), 4356, 2007 |
| 10 |
Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy Schulze F, Dadgar A, Blasing J, Hempel T, Diez A, Christen J, Krost A Journal of Crystal Growth, 289(2), 485, 2006 |