검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Metamorphic 6.00 A heterojunction bipolar transistors on InP by molecular-beam epitaxy Lange MD, Cavus A, Monier C, Sandhu RS, Block TR, Gambin VF, Sawdai DJ, Gutierrez-Aitken AL Journal of Vacuum Science & Technology B, 22(3), 1570, 2004 |
| 2 |
Strain relaxation and surface roughness of InxAl1-xAs graded buffer layers grown on InP for 6.05 angstrom applications Noori AM, Sandhu RS, Hayashi SL, Meserole ED, Hardev V, Cavus A, Lange M, Monier C, Hsing R, Sawdai D, Wojtowicz M, Block TR, Gutierrez-Aitken A, Goorsky MS Journal of Vacuum Science & Technology B, 22(5), 2303, 2004 |
| 3 |
Interfacial roughness and carrier scattering due to misfit dislocations in In0.52Al0.48As/In0.75Ga0.25As/InP structures Naidenkova M, Goorsky MS, Sandhu R, Hsing R, Wojtowicz M, Chin TP, Block TR, Streit DC Journal of Vacuum Science & Technology B, 20(3), 1205, 2002 |
| 4 |
High performance InP high electron mobility transistors by valved phosphorus cracker Chin TP, Chen YC, Barsky M, Wojtowicz M, Grundbacher R, Lai R, Streit DC, Block TR Journal of Vacuum Science & Technology B, 18(3), 1642, 2000 |
| 5 |
Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers Goorsky MS, Sandhu R, Hsing R, Naidenkova M, Wojtowicz M, Chin TP, Block TR, Streit DC Journal of Vacuum Science & Technology B, 18(3), 1658, 2000 |
| 6 |
InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker Chin TP, Gutierrez-Aitken AL, Cowles J, Kaneshiro EN, Han AC, Block TR, Oki AK, Streit DC Journal of Vacuum Science & Technology B, 17(3), 1136, 1999 |
| 7 |
Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs Sandhu RS, Bhasin G, Moore CD, U'Ren GD, Goorsky MS, Chin TP, Wojtowicz M, Block TR, Streit DC Journal of Vacuum Science & Technology B, 17(3), 1163, 1999 |
| 8 |
Multiwafer molecular beam epitaxy for high volume production of GaAs/AlGaAs heterojunction bipolar transistor wafers Block TR, Wojtowicz M, Han AC, Olson SR, Oki AK, Streit DC Journal of Vacuum Science & Technology B, 16(3), 1475, 1998 |
| 9 |
Commercial Heterojunction Bipolar-Transistor Production by Molecular-Beam Epitaxy Streit DC, Oki AK, Block TR, Lammert MD, Hoppe MM, Umemoto DK, Wojtowicz M Journal of Vacuum Science & Technology B, 14(3), 2216, 1996 |
| 10 |
Molecular-Beam Epitaxy Growth and Characterization of InGaAlAs-Collector Heterojunction Bipolar-Transistors with 140 GHz - F-Max and 20 V Breakdown Block TR, Wojtowicz M, Cowles J, Tran L, Oki AK, Streit DC Journal of Vacuum Science & Technology B, 14(3), 2221, 1996 |