검색결과 : 5건
No. | Article |
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1 |
Effects of blocking oxide layer types on the performance of nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite thin films Chiang KC, Hsieh TE Thin Solid Films, 621, 63, 2017 |
2 |
Improvement of the multi-level cell performance by a soft program method in flash memory devices Park JK, Lee KH, Pyi SH, Lee SH, Cho BJ Solid-State Electronics, 94, 86, 2014 |
3 |
Barrier engineering in metal-aluminum oxide-nitride-oxide-silicon (MANOS) flash memory: Invited Kang CY Current Applied Physics, 10(1), E27, 2010 |
4 |
Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories Bocquet M, Molas G, Perniola L, Garros X, Buckley J, Gely M, Colonna JP, Grampeix H, Martin F, Vidal V, Toffoli A, Deleonibus S, Ghibaudo G, Pananakakis G, De Salvo B Solid-State Electronics, 53(7), 786, 2009 |
5 |
Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures Yang YL, White MH Solid-State Electronics, 44(6), 949, 2000 |