화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Effects of blocking oxide layer types on the performance of nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite thin films
Chiang KC, Hsieh TE
Thin Solid Films, 621, 63, 2017
2 Improvement of the multi-level cell performance by a soft program method in flash memory devices
Park JK, Lee KH, Pyi SH, Lee SH, Cho BJ
Solid-State Electronics, 94, 86, 2014
3 Barrier engineering in metal-aluminum oxide-nitride-oxide-silicon (MANOS) flash memory: Invited
Kang CY
Current Applied Physics, 10(1), E27, 2010
4 Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories
Bocquet M, Molas G, Perniola L, Garros X, Buckley J, Gely M, Colonna JP, Grampeix H, Martin F, Vidal V, Toffoli A, Deleonibus S, Ghibaudo G, Pananakakis G, De Salvo B
Solid-State Electronics, 53(7), 786, 2009
5 Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures
Yang YL, White MH
Solid-State Electronics, 44(6), 949, 2000