검색결과 : 19건
No. | Article |
---|---|
1 |
Elaboration and characterization of boron doping during SiC growth by VLS mechanism Soueidan M, Ferro G, Nsouli B, Roumie M, Habka N, Souliere V, Bluet JM, Kazan M Journal of Crystal Growth, 327(1), 46, 2011 |
2 |
I(V) computational conduction model for a SiC-6H Schottky diode Benmaza H, Akkal B, Anani M, Abid H, Bensaad Z, Bluet JM Materials Chemistry and Physics, 112(1), 63, 2008 |
3 |
Conductance deep-level transient spectroscopy study of 1 mu m gate length 4H-SiC MESFETs Gassoumi M, Bluet JM, Dermoul I, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C Solid-State Electronics, 50(2), 214, 2006 |
4 |
Hole-like Defects in n-Channel 4H-SIC MESFETs Observed by Current Transient Spectroscopy Bluet JM, Gassoumi M, Dermoul I, Chekir F, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C Materials Science Forum, 483, 865, 2005 |
5 |
Optical characterization of full SiC wafer El Harrouni I, Bluet JM, Ziane D, Mermoux M, Baillet F, Guillot G Materials Science Forum, 457-460, 593, 2004 |
6 |
Deep level investigation by current and capacitance transient spectroscopy in 4H-SiC MESFETs on semi-insulating substrates. Gassoumi M, Sghaier N, Dermoul I, Chekir F, Maaref H, Bluet JM, Guillot G, Morvan E, Noblanc O, Dua C, Brylinski C Materials Science Forum, 457-460, 1185, 2004 |
7 |
Characterizations of SiC/SiO2 interface quality toward high power MOSFETs realization Ziane D, Bluet JM, Guillot G, Godignon P, Monserrat J, Ciechonski R, Syvajarvi M, Yakimova R, Chen L, Mawby P Materials Science Forum, 457-460, 1281, 2004 |
8 |
QuaSiC Smart-Cut (R) substrates for SiC high power devices Letertre F, Jalaguier E, Di Cioccio L, Templier F, Bluet JM, Banc C, Matko I, Chenevier B, Bano E, Guillot G, Billon T, Aspar B, Madar R, Ghyselen B Materials Science Forum, 389-3, 151, 2002 |
9 |
Epitaxial growth of 4H-SiC with hexamethyldisilane HMDS Sartel C, Souliere V, Dazord J, Monteil Y, El-Harrouni I, Bluet JM, Guillot G Materials Science Forum, 389-3, 263, 2002 |
10 |
UV scanning photoluminescence spectroscopy investigation of 6H-and 4H-SiC Masarotto L, Bluet JM, Guillot G Materials Science Forum, 389-3, 601, 2002 |