검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm Bugge F, Bege R, Blume G, Feise D, Sumpf B, Werner N, Zeimer U, Paschke K, Weyers M Journal of Crystal Growth, 491, 31, 2018 |
| 2 |
Growth of laser diode structures with emission wavelength beyond 1100 nm for yellow-green emission by frequency conversion Bugge F, Paschke K, Blume G, Feise D, Zeimer U, Weyers M Journal of Crystal Growth, 414, 205, 2015 |
| 3 |
Combined Mg/Zn p-type doping for AlGaInP laser diodes Pohl J, Bugge F, Blume G, Knigge A, Knigge S, Erbert G, Weyers M Journal of Crystal Growth, 414, 215, 2015 |