검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices Longo M, Parisini A, Tarricone L, Vantaggio S, Bocchi C, Germini F, Lazzarini L Journal of Crystal Growth, 311(18), 4293, 2009 |
| 2 |
Antireflecting-passivating dielectric films on crystalline silicon solar cells for space applications Barrera M, Pla J, Bocchi C, Migliori A Solar Energy Materials and Solar Cells, 92(9), 1115, 2008 |
| 3 |
Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x approximate to 0.5) grown by LPE and MOCVD Mishumyi VA, de Anda F, Gorbatchev AY, Kudriavtsev Y, Elyukhin VA, Prutskij T, Pelosi C, Bocchi C, Ber BY, Vazquez FEO Thin Solid Films, 516(22), 8092, 2008 |
| 4 |
Structural and electrical investigation of high temperature annealed As-implanted Si crystals Bocchi C, Felisari L, Catellani A, Cicero G, Germini F, Gombia E, Mosca R, Nasi L, Mukhamedzhanov EK, Chuev MA, Privitera V, Camalleri M, Cali D Journal of Vacuum Science & Technology B, 23(4), 1504, 2005 |
| 5 |
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources Begotti M, Longo M, Magnanini R, Parisini A, Tarricone L, Bocchi C, Germini F, Lazzarini L, Nasi L, Geddo M Applied Surface Science, 222(1-4), 423, 2004 |
| 6 |
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs Longo M, Magnanini R, Parisini A, Tarricone L, Carbognani A, Bocchi C, Gombia E Journal of Crystal Growth, 248, 119, 2003 |
| 7 |
Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow BF2 implantation in Si Bocchi C, Germini F, Ghezzi G, Gombia E, Mosca R, Nasi L, Mukhamedzhanov EK, Privitera V, Spinella C Journal of Vacuum Science & Technology B, 20(4), 1436, 2002 |
| 8 |
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE Attolini G, Bocchi C, Germini F, Pelosi C, Parisini A, Tarricone L, Kudela R, Hasenohrl S Materials Chemistry and Physics, 66(2-3), 246, 2000 |