검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Static and low frequency noise characterization of ultra-thin body InAs MOSFETs Karatsori TA, Pastorek M, Theodorou CG, Fadjie A, Wichmann N, Desplanque L, Wallart X, Bollaert S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 143, 56, 2018 |
| 2 |
Monte Carlo analysis of the dynamic behavior of III-V MOSFETs for low-noise RF applications Shi M, Saint-Martin J, Bournel A, Querlioz D, Wichmann N, Bollaert S, Danneville F, Dollfus P Solid-State Electronics, 87, 51, 2013 |
| 3 |
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation Moschetti G, Wadefalk N, Nilsson PA, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S, Grahn J Solid-State Electronics, 64(1), 47, 2011 |
| 4 |
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S, Grahn J Solid-State Electronics, 52(5), 775, 2008 |
| 5 |
Ballistic nano-devices for high frequency applications Bollaert S, Cappy A, Roelens Y, Galloo JS, Gardes C, Teukam Z, Wallart X, Mateos J, Gonzalez T, Vasallo BG, Hackens B, Berdnarz L, Huynen I Thin Solid Films, 515(10), 4321, 2007 |
| 6 |
The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter Bollaert S, Cordier Y, Zaknoune M, Happy H, Hoel V, Lepilliet S, Theron D, Cappy A Solid-State Electronics, 44(6), 1021, 2000 |
| 7 |
0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs Zaknoune M, Cordier Y, Bollaert S, Ferre D, Theron D, Crosnier Y Solid-State Electronics, 44(9), 1685, 2000 |