| 1 |
Carrier concentration profiling on oxidized surfaces of Si device cross sections by resonant electron tunneling scanning probe spectroscopy
Bolotov L, Nishizawa M, Kanayama T, Miura Y
Journal of Vacuum Science & Technology B, 26(1), 415, 2008 |
| 2 |
Scanning tunneling microscopy detection of individual dopant atoms on wet-prepared Si(111): H surfaces
Nishizawa M, Bolotov L, Tada T, Kanayama T
Journal of Vacuum Science & Technology B, 24(1), 365, 2006 |
| 3 |
Nanofabrication using structure controlled hydrogenated Si clusters deposited on Si surfaces (vol 18, pg 3497, 2000)
Kanayama T, Watanabe MO, Bolotov L, Uchida N
Journal of Vacuum Science & Technology B, 22(6), 2863, 2004 |
| 4 |
Degradation of C-60 nanocrystals on Si(111)-(7x7) surfaces upon low-energy electron impact
Bolotov L, Kanayama T
Molecular Crystals and Liquid Crystals, 386, 129, 2002 |
| 5 |
Nanofabrication using structure controlled hydrogenated Si clusters deposited on Si surfaces
Kanayama T, Watanabe MO, Bolotov L, Uchida N
Journal of Vacuum Science & Technology B, 18(6), 3497, 2000 |
