검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Investigation of microwave switching 4HSiC p-i-n diodes in the 20 divided by 500 degrees C temperature range Boltovets MS, Basanets VV, Camara N, Krivutsa VA, Zekentes K Materials Science Forum, 483, 997, 2005 |
| 2 |
High temperature contacts to GaN and SiC based on TiBx nanostructure layers Boltovets MS, Ivanov VN, Avksentyev AY, Belyaev AE, Borisenko AG, Fedorovitsh OA, Konakova RV, Kudryk YY, Lytvyn PM, Milenin VV, Sachenko AV, Sveschnikov YN Materials Science Forum, 483, 1061, 2005 |
| 3 |
High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes Levinshtein ME, Ivanov PA, Boltovets MS, Krivutsa VA, Palmour JW, Das MK, Hull BA Solid-State Electronics, 49(7), 1228, 2005 |
| 4 |
Simulation and prototype fabrication of microwave modulators with 4H-SiC p-i-n diodes Bludov AV, Boltovets MS, Vassilevski KV, Zorenko AV, Zekentes K, Lebedev AA, Krivutsa VA Materials Science Forum, 457-460, 1089, 2004 |
| 5 |
Effect of boron diffusion doping of silicon on the micromechanical and luminescent properties of porous layers Makara VA, Vakulenko OV, Dacenko OI, Kravchenko VM, Ostapchuk TV, Rudenko OV, Boltovets MS, Fesunenko VO Thin Solid Films, 312(1-2), 202, 1998 |