검색결과 : 7건
No. | Article |
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1 |
Optimum activation and diffusion with a combination of spike and flash annealing Paul S, Lerch W, Chan J, Mccoy S, Gelpey J, Cristiano F, Severac F, Fazzini PF, Bolze D Journal of Vacuum Science & Technology B, 26(1), 293, 2008 |
2 |
Lnfluence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions Faifer VN, Schroder DK, Current MI, Clarysse T, Timans PJ, Zangerle T, Vandervorst W, Wong TMH, Moussa A, Mccoy S, Gelpey J, Lerch W, Paul S, Bolze D, Halim J Journal of Vacuum Science & Technology B, 25(5), 1588, 2007 |
3 |
Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon Paul S, Lerch W, Colombeau B, Cowern NEB, Cristiano F, Boninelli S, Bolze D Journal of Vacuum Science & Technology B, 24(1), 437, 2006 |
4 |
Atomic layer processing for doping of SiGe Tillack B, Yuji YA, Bolze D, Heinemann B, Rucker H, Knoll D, Murota J, Mehr W Thin Solid Films, 508(1-2), 279, 2006 |
5 |
Circuit applications of high-performance SiGe : C HBTs integrated in BiCMOS technology Winkler W, Borngraber J, Heinemann B, Rucker H, Barth R, Bauer J, Bolze D, Drews J, Ehwald KE, Grabolla T, Haak U, Hoppner W, Knoll D, Kruger D, Kuck B, Kurps R, Marschmeyer M, Richter H, Schley P, Schmidt D, Scholz R, Tillack B, Wolansky D, Wulf HE, Yamamoto Y, Zaumseil P Applied Surface Science, 224(1-4), 297, 2004 |
6 |
Diffusion and segregation of shallow As, and Sb junctions in silicon Kruger D, Rucker H, Heinemann B, Melnik V, Kurps R, Bolze D Journal of Vacuum Science & Technology B, 22(1), 455, 2004 |
7 |
Development of spectroscopic ellipsometry as in-line control for CoSALICIDE process Fursenko O, Bauer J, Goryachko A, Bolze D, Zaumseil P, Krugera D, Wolansky D, Bugiel E, Tillack B Thin Solid Films, 450(2), 248, 2004 |