| 1 |
On the turn-around phenomenon in n-MOS transistors under NBTI conditions
Benabdelmoumene A, Djezzar B, Chenouf A, Tahi H, Zatout B, Kechouane M
Solid-State Electronics, 121, 34, 2016 |
| 2 |
On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices
Djezzar B, Tahi H, Benabdelmoumene A, Chenouf A, Goudjil M, Kribes Y
Solid-State Electronics, 106, 54, 2015 |
| 3 |
Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN
Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM
Applied Surface Science, 317, 1022, 2014 |
| 4 |
Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric
Tsui BY, Su TT, Shew BY, Huang YT
Solid-State Electronics, 81, 119, 2013 |
| 5 |
Mechanisms for generation of oxide trapped charges in ultrathin silicon dioxide films during electrical stress
Samanta P
Solid-State Electronics, 52(2), 255, 2008 |
