검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics Wang HY, Wang JY, Liu JQ, He YD, Wang MJ, Yu M, Wu WG Solid-State Electronics, 141, 13, 2018 |
| 2 |
The impact of interface states on the mobility and drive current of In0.53Ga0.47As semiconductor n-MOSFETs Osgnach P, Caruso E, Lizzit D, Palestri P, Esseni D, Selmi L Solid-State Electronics, 108, 90, 2015 |
| 3 |
Thickness Dependence of Oxide Wearout Dumin DJ Journal of the Electrochemical Society, 143(11), 3736, 1996 |