화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
Fenouillet-Beranger C, Perreau P, Benoist T, Richier C, Haendler S, Pradelle J, Bustos J, Brun P, Tosti L, Weber O, Andrieu F, Orlando B, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gregoire M, Ducote J, Gouraud P, Margain A, Borowiak C, Bianchini R, Planes N, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Boeuf F
Solid-State Electronics, 88, 15, 2013
2 Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances
Ben Akkez I, Fenouillet-Beranger C, Cros A, Perreau P, Haendler S, Weber O, Andrieu F, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gouraud P, Margain A, Borowiak C, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Balestra F, Ghibaudo G, Boeuf F
Solid-State Electronics, 90, 143, 2013
3 Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below
Fenouillet-Beranger C, Perreau P, Denorme S, Tosti L, Andrieu F, Weber O, Monfray S, Barnola S, Arvet C, Campidelli Y, Haendler S, Beneyton R, Perrot C, de Buttet C, Gros P, Pham-Nguyen L, Leverd F, Gouraud P, Abbate F, Baron F, Torres A, Laviron C, Pinzelli L, Vetier J, Borowiak C, Margain A, Delprat D, Boedt F, Bourdelle K, Nguyen BY, Faynot O, Skotnicki T
Solid-State Electronics, 54(9), 849, 2010