검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions Polyakov AY, Smirnov NB, Govorkov AV, Botchkarev AE, Nelson NN, Fahmi MME, Griffin JA, Khan A, Mohammad SN, Johnstone DK, Bublik VT, Chsherbatchev KD, Voronova M Solid-State Electronics, 46(12), 2141, 2002 |
| 2 |
Optical properties and defects in GaAsN and InGaAsN films and quantum well structures Polyakov AY, Smirnov NB, Govorkov AV, Botchkarev AE, Nelson NN, Fahmi MME, Griffin JA, Khan A, Mohammad SN, Johnstone DK, Bublik VT, Chsherbatchev KD, Voronova MI, Kasatochkin VS Solid-State Electronics, 46(12), 2147, 2002 |
| 3 |
Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy Polyakov AY, Smirnov NB, Govorkov AV, Botchkarev AE, Nelson NN, Fahmi MME, Griffin JA, Khan A, Mohammad SN, Johnstone DK, Bublik VT, Chsherbatchev KD, Voronova MI, Kasatochkin VS Solid-State Electronics, 46(12), 2155, 2002 |
| 4 |
Surface-Roughness of Nitrided (0001)Al2O3 and AlN Epilayers Grown on (0001)Al2O3 by Reactive Molecular-Beam Epitaxy Kim W, Yeadon M, Botchkarev AE, Mohammad SN, Gibson JM, Morkoc H Journal of Vacuum Science & Technology B, 15(4), 921, 1997 |
| 5 |
Gate Quality Si3N4 Prepared by Low-Temperature Remote Plasma-Enhanced Chemical-Vapor-Deposition for III-V Semiconductor-Based Metal-Insulator-Semiconductor Devices Park DG, Tao M, Li D, Botchkarev AE, Fan Z, Wang Z, Mohammad SN, Rockett A, Abelson JR, Morkoc H, Heyd AR, Alterovitz SA Journal of Vacuum Science & Technology B, 14(4), 2674, 1996 |