검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
On the Mechanism of In Nanoparticle Formation by Exposing ITO Thin Films to Hydrogen Plasmas Fan Z, Maurice JL, Chen WH, Guilet S, Cambril E, Lafosse X, Gouraud L, Merghem K, Yu LW, Bouchoule S, Cabarrocas PRI Langmuir, 33(43), 12114, 2017 |
| 2 |
MOVPE grown periodic AlN/BAIN heterostructure with high boron content Li X, Sundaram S, El Gmili Y, Genty F, Bouchoule S, Patriache G, Disseix P, Reveret F, Leymarie J, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A Journal of Crystal Growth, 414, 119, 2015 |
| 3 |
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm Li X, Le Gac G, Bouchoule S, El Gmili Y, Patriarche G, Sundaram S, Disseix P, Reveret F, Leymarie J, Streque J, Genty F, Salvestrini JP, Dupuis RD, Li XH, Voss PL, Ougazzaden A Journal of Crystal Growth, 432, 37, 2015 |
| 4 |
Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures Chelda-Gourmala O, Trassoudaine A, Andre Y, Bouchoule S, Gil E, Tourret J, Castelluci D, Cadoret R Journal of Crystal Growth, 312(12-13), 1899, 2010 |
| 5 |
Surface loss rates of H and Cl radicals in an inductively coupled plasma etcher derived from time-resolved electron density and optical emission measurements Curley GA, Gatilova L, Guilet S, Bouchoule S, Gogna GS, Sirse N, Karkari S, Booth JP Journal of Vacuum Science & Technology A, 28(2), 360, 2010 |
| 6 |
Investigation of InP etching mechanisms in a Cl-2/H-2 inductively coupled plasma by optical emission spectroscopy Gatilova L, Bouchoule S, Guilet S, Chabert P Journal of Vacuum Science & Technology A, 27(2), 262, 2009 |
| 7 |
Time-multiplexed, inductively coupled plasma process with separate SiCl4 and O-2 steps for etching of GaAs with high selectivity Golka S, Arens M, Reetz M, Kwapien T, Bouchoule S, Patriarche G Journal of Vacuum Science & Technology B, 27(5), 2270, 2009 |
| 8 |
Anisotropic and smooth inductively coupled plasma etching of III-V laser waveguides using HBr-O-2 chemistry Bouchoule S, Azouigui S, Guilet S, Patriarche G, Largeau L, Martinez A, Le Gratiet L, Lemaitre A, Lelarge F Journal of the Electrochemical Society, 155(10), H778, 2008 |
| 9 |
Sidewall passivation assisted by a silicon coverplate during Cl-2-H-2 and HBr inductively coupled plasma etching of InP for photonic devices Bouchoule S, Patriarche G, Guilet S, Gatilova L, Largeau L, Chabert P Journal of Vacuum Science & Technology B, 26(2), 666, 2008 |
| 10 |
Optimization of a Cl-2-H-2 inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures Guilet S, Bouchoule S, Jany C, Corr CS, Chabert P Journal of Vacuum Science & Technology B, 24(5), 2381, 2006 |