검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Morphology control in thin films of PS: PLA homopolymer blends by dip-coating deposition Vital A, Vayer M, Tillocher T, Dussart R, Boufnichel M, Sinturel C Applied Surface Science, 393, 127, 2017 |
| 2 |
Modification of poly(styrene) thin films and enhancement of cryogenic plasma etching resistance by ruthenium tetroxide vapor staining Vital A, Vayer M, Sinturel C, Tillocher T, Lefaucheux P, Dussart R, Boufnichel M Polymer, 76, 123, 2015 |
| 3 |
Deep GaN etching by inductively coupled plasma and induced surface defects Ladroue J, Meritan A, Boufnichel M, Lefaucheux P, Ranson P, Dussart R Journal of Vacuum Science & Technology A, 28(5), 1226, 2010 |
| 4 |
Two cryogenic processes involving SF6, O-2, and SiF4 for silicon deep etching Tillocher T, Dussart R, Overzet LJ, Mellhaoui X, Lefaucheux P, Boufnichel M, Ranson P Journal of the Electrochemical Society, 155(3), D187, 2008 |
| 5 |
Oxidation threshold in silicon etching at cryogenic temperatures Tillocher T, Dussart R, Mellhaoui X, Lefaucheux P, Maaza NM, Ranson P, Boufnichel M, Overzet LJ Journal of Vacuum Science & Technology A, 24(4), 1073, 2006 |
| 6 |
Profile control of high aspect ratio trenches of silicon. II. Study of the mechanisms responsible for local bowing formation and elimination of this effect Boufnichel M, Aachboun S, Lefaucheux P, Ranson P Journal of Vacuum Science & Technology B, 21(1), 267, 2003 |
| 7 |
Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing Boufnichel M, Aachboun S, Grangeon F, Lefaucheux P, Ranson P Journal of Vacuum Science & Technology B, 20(4), 1508, 2002 |
| 8 |
Study of a mechanically clamped cryo-chuck device in a high density plasma for deep anisotropic etching of silicon Hibert C, Aachboun S, Boufnichel M, Ranson P Journal of Vacuum Science & Technology A, 19(2), 646, 2001 |
| 9 |
Cryogenic etching of deep narrow trenches in silicon Aachboun S, Ranson P, Hilbert C, Boufnichel M Journal of Vacuum Science & Technology A, 18(4), 1848, 2000 |