검색결과 : 12건
No. | Article |
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1 |
Growth and characterization of beta-Ga2O3 crystals Nikolaev VI, Maslov V, Stepanov SI, Pechnikov AI, Krymov V, Nikitina IP, Guzilova LI, Bougrov VE, Romanov AE Journal of Crystal Growth, 457, 132, 2017 |
2 |
TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern Mynbaeva MG, Kremleva AV, Kirilenko DA, Sitnikova AA, Pechnikov AI, Mynbaev KD, Nikolaev VI, Bougrov VE, Lipsanen H, Romanov AE Journal of Crystal Growth, 445, 30, 2016 |
3 |
Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN Ali M, Romanov AE, Suihkonen S, Svensk O, Sintonen S, Sopanen M, Lipsanen H, Nevedomsky VN, Bert NA, Odnoblyudov MA, Bougrov VE Journal of Crystal Growth, 344(1), 59, 2012 |
4 |
Void shape control in GaN re-grown on hexagonally patterned mask-less GaN Ali M, Romanov AE, Suihkonen S, Svensk O, Torma PT, Sopanen M, Lipsanen H, Odnoblyudov MA, Bougrov VE Journal of Crystal Growth, 315(1), 188, 2011 |
5 |
Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs Torma PT, Svensk O, Ali M, Suihkonen S, Sopanen M, Odnoblyudov MA, Bougrov VE Solid-State Electronics, 53(2), 166, 2009 |
6 |
MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures Suihkonen S, Svensk O, Torma PT, Ali M, Sopanen M, Lipsanen H, Odnoblyudo MA, Bougrov VE Journal of Crystal Growth, 310(7-9), 1777, 2008 |
7 |
Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer Svensk O, Torma PT, Suihkonen S, Ali M, Lipsanen H, Sopanen M, Odnoblyudov MA, Bougrov VE Journal of Crystal Growth, 310(23), 5154, 2008 |
8 |
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs Torma PT, Svensk O, Ali M, Suihkonen S, Sopanen M, Odnoblyudov MA, Bougrov VE Journal of Crystal Growth, 310(23), 5162, 2008 |
9 |
Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique Lang T, Odnoblyudov MA, Bougrov VE, Suihkonen S, Svensk O, Torma PT, Sopanen M, Lipsanen H Journal of Crystal Growth, 298, 276, 2007 |
10 |
The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency Suihkonen S, Svensk O, Lang T, Lipsanen H, Odnoblyudov MA, Bougrov VE Journal of Crystal Growth, 298, 740, 2007 |