검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Modeling of program, erase and retention characteristics of charge-trap gate all around memories Nowak E, Perniola L, Ghibaudo G, Molas G, Reimbold G, De Salvo B, Boulanger F Solid-State Electronics, 58(1), 75, 2011 |
| 2 |
A study of N-induced traps due to a nitrided gate in high-kappa/metal gate nMOSFETs and their impact on electron mobility Casse M, Garros X, Weber O, Andrieu F, Reimbold G, Boulanger F Solid-State Electronics, 65-66, 139, 2011 |
| 3 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |
| 4 |
HfO2-based gate stacks transport mechanisms and parameter extraction Coignus J, Leroux C, Clerc R, Truche R, Ghibaudo G, Reimbold G, Boulanger F Solid-State Electronics, 54(9), 972, 2010 |
| 5 |
Analytical modeling of tunneling current through SiO2-HfO2 stacks in metal oxide semiconductor structures Coignus J, Clerc R, Leroux C, Reimbold G, Ghibaudo G, Boulanger F Journal of Vacuum Science & Technology B, 27(1), 338, 2009 |
| 6 |
Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack Rochette F, Casse M, Mouis M, Haziot A, Pioger T, Ghibaudo G, Boulanger F Solid-State Electronics, 53(3), 392, 2009 |
| 7 |
High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate Romanjek K, Hutin L, Le Royer C, Pouydebasque A, Jaud MA, Tabone C, Augendre E, Sanchez L, Hartmann JM, Grampeix H, Mazzocchi V, Soliveres S, Truche R, Clavelier L, Scheiblin P, Garros X, Reimbold G, Vinet M, Boulanger F, Deleonibus S Solid-State Electronics, 53(7), 723, 2009 |
| 8 |
Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory Jacob S, De Salvo B, Perniola L, Festes G, Bodnar S, Coppard R, Thiery JF, Pate-Cazal T, Bongiorno C, Lombardo S, Dufourcq J, Jalaguier E, Pedron T, Boulanger F, Deleonibus S Solid-State Electronics, 52(9), 1452, 2008 |
| 9 |
Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory (vol 52, pg 1452, 2008) Jacob S, De Salvo B, Perniola L, Festes G, Bodnar S, Coppard R, Thiery JF, Pate-Cazal T, Bongiorno C, Lombardo S, Dufourcq J, Jalaguier E, Pedron T, Boulanger F, Deleonibus S Solid-State Electronics, 52(11), 1838, 2008 |
| 10 |
Experimental evidence and extraction of the electron mass variation in [110] uniaxially strained MOSFETs Rochette F, Casse M, Mouis M, Reimbold G, Blachier D, Leroux C, Guillaumot B, Boulanger F Solid-State Electronics, 51(11-12), 1458, 2007 |