화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
Petit-Etienne C, Darnon M, Vallier L, Pargon E, Cunge G, Boulard F, Joubert O, Banna S, Lill T
Journal of Vacuum Science & Technology B, 28(5), 926, 2010
2 Effect of Ar and N-2 addition on CH4-H-2 based chemistry inductively coupled plasma etching of HgCdTe
Boulard F, Baylet J, Cardinaud C
Journal of Vacuum Science & Technology A, 27(4), 855, 2009