검색결과 : 31건
No. | Article |
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1 |
Temperature and RF Current Sensor Wafers for Plasma Etching Milenin AP, Demand M, Boullart W, Arleo P Journal of the Electrochemical Society, 159(1), H5, 2012 |
2 |
Metrology for Implanted Si Substrate Loss Studies Radisic D, Shamiryan D, Mannaert G, Boullart W, Rosseel E, Bogdanowicz J, Goossens J, Marrant K, Bender H, Sonnemans R, Berry I Journal of the Electrochemical Society, 157(5), H580, 2010 |
3 |
TaN metal gate etch mechanisms in BCl3-based plasmas Shamiryan D, Danila A, Baklanov MR, Boullart W Journal of Vacuum Science & Technology A, 28(2), 302, 2010 |
4 |
Effect of energetic ions on plasma damage of porous SiCOH low-k materials Kunnen E, Baklanov MR, Franquet A, Shamiryan D, Rakhimova TV, Urbanowicz AM, Struyf H, Boullart W Journal of Vacuum Science & Technology B, 28(3), 450, 2010 |
5 |
Impact of metal etch residues on etch species density and uniformity Dictus D, Shamiryan D, Paraschiv V, Boullart W, De Gendt S, Vinckier C Journal of Vacuum Science & Technology B, 28(4), 789, 2010 |
6 |
Unusual Modification of CuCl or CuBr Films by He Plasma Exposure Resulting in Nanowire Formation Dictus D, Baklanov MR, Pikulev V, De Gendt S, Vinckier C, Boullart W, Vanhaelemeersch S Langmuir, 26(3), 2014, 2010 |
7 |
SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS Shamiryan D, Baklanov M, Claes M, Boullart W, Paraschiv V Chemical Engineering Communications, 196(12), 1475, 2009 |
8 |
Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications Vos I, Hellin D, Vereecke G, Pavel E, Boullart W, Vertommen J Journal of Vacuum Science & Technology B, 27(5), 2301, 2009 |
9 |
Using ellipsometry for assessment of TiN surface roughness after plasma etch Shamiryan D, Paraschiv V, Dictus D, Baklanov MR, Beckx S, Boullart W Journal of the Electrochemical Society, 155(2), H108, 2008 |
10 |
High aspect ratio via etch development for Cu nails in 3-D-stacked ICs Van Aelst J, Struyf H, Boullart W, Vanhaelemeersch S Thin Solid Films, 516(11), 3502, 2008 |