화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy
Hooper SE, Kauer M, Bousquet V, Johnson K, Zellweger C, Heffernan J
Journal of Crystal Growth, 278(1-4), 361, 2005
2 High quality GaN on Si(111) using (AlN/GaN)(x) superlattice and maskless ELO
Lahreche H, Bousquet V, Laugt M, Tottereau O, Vennegues P, Beaumont B, Gibart P
Materials Science Forum, 338-3, 1487, 2000