검색결과 : 2건
No. | Article |
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1 |
InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy Hooper SE, Kauer M, Bousquet V, Johnson K, Zellweger C, Heffernan J Journal of Crystal Growth, 278(1-4), 361, 2005 |
2 |
High quality GaN on Si(111) using (AlN/GaN)(x) superlattice and maskless ELO Lahreche H, Bousquet V, Laugt M, Tottereau O, Vennegues P, Beaumont B, Gibart P Materials Science Forum, 338-3, 1487, 2000 |