검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T Journal of Crystal Growth, 510, 18, 2019 |
| 2 |
Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges Khazaka R, Bogumilowicz Y, Rouchon D, Boutry H, Chalupa Z, Lapras V, Previtali B, Chevalier N, Papon AM, David S, Maitrejean S Applied Surface Science, 445, 77, 2018 |
| 3 |
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T Thin Solid Films, 645, 5, 2018 |