화학공학소재연구정보센터
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No. Article
1 Application of scatterometric porosimetry to characterize porous ultra low-k patterned layers
Licitra C, Bouyssou R, El Kodadi M, Haberfehlner G, Chevolleau T, Hazart J, Virot L, Besacier M, Schiavone P, Bertin F
Thin Solid Films, 519(9), 2825, 2011
2 Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy
Darnon M, Chevolleau T, David T, Ducote J, Posseme N, Bouyssou R, Bailly F, Perret D, Joubert O
Journal of Vacuum Science & Technology B, 28(1), 149, 2010
3 Scatterometric porosimetry: A new characterization technique for porous material patterned structures
Bouyssou R, El Kodadi M, Licitra C, Chevolleau T, Besacier M, Posseme N, Joubert O, Schiavone P
Journal of Vacuum Science & Technology B, 28(4), L31, 2010
4 Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms
Posseme N, Chevolleau T, Bouyssou R, David T, Arnal V, Barnes JP, Verove C, Joubert O
Journal of Vacuum Science & Technology B, 28(4), 809, 2010
5 Multi-solvent ellipsometric porosimetry analysis of plasma-treated porous SiOCH films
Licitra C, Bouyssou R, Chevolleau T, Bertin F
Thin Solid Films, 518(18), 5140, 2010