화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
Mooney PM, Rim K, Christiansen SH, Chan KK, Chu JO, Cai J, Chen H, Jordan-Sweet JL, Yang YY, Boyd DC
Solid-State Electronics, 49(10), 1669, 2005
2 Electrochemical and Ir Spectroelectrochemical Investigations of the Series Mo(Co)(6-N)(CNR)(N) (N=1-6) (R=2,8-Dimethylphenyl) - In-Situ Observation of Fac-Mer and Cis-Trans Isomerizations
Lyons LJ, Pitz SL, Boyd DC
Inorganic Chemistry, 34(1), 316, 1995
3 Electronic-Structure of Ligand-Bridged Complexes Containing the (Rh2(3+ Core - ESR Spectroscopy, Mo Calculations, and X-Ray Structures of the 3 Redox Pairs (Rh2(Co)2Ll’(Mu-Phnc(Me)NPH)2)Z (Z=0,1 L=l’=pph3, P(OPh)3 - L=pph3, L’=p (OPh)3)
Boyd DC, Connelly NG, Herbosa GG, Hill MG, Mann KR, Mealli C, Orpen AG, Richardson KE, Rieger PH
Inorganic Chemistry, 33(5), 960, 1994