화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) interface trap state reduction via in-situ N-2/H-2 RF downstream plasma passivation
Breeden M, Wolf S, Ueda S, Fang ZW, Chang CY, Tang KC, McIntyre P, Kummel AC
Applied Surface Science, 478, 1065, 2019
2 Low temperature thermal ALD TaNx and TiNx films from anhydrous N2H4
Wolf S, Breeden M, Kwak I, Park JH, Kavrik M, Naik M, Alvarez D, Spiegelman J, Kummel AC
Applied Surface Science, 462, 1029, 2018