검색결과 : 2건
No. | Article |
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1 |
Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) interface trap state reduction via in-situ N-2/H-2 RF downstream plasma passivation Breeden M, Wolf S, Ueda S, Fang ZW, Chang CY, Tang KC, McIntyre P, Kummel AC Applied Surface Science, 478, 1065, 2019 |
2 |
Low temperature thermal ALD TaNx and TiNx films from anhydrous N2H4 Wolf S, Breeden M, Kwak I, Park JH, Kavrik M, Naik M, Alvarez D, Spiegelman J, Kummel AC Applied Surface Science, 462, 1029, 2018 |