검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport Jaud A, Auvray L, Kahouli A, Abi-Tannous T, Linas S, Ferro G, Brylinski C Journal of Crystal Growth, 467, 18, 2017 |
| 2 |
Understanding the growth of p-doped 4H-SiC layers using vapour-liquid-solid transport Vo-Ha A, Carole D, Lazar M, Tournier D, Cauwet F, Souliere V, Thierry-Jebali N, Brosselard P, Planson D, Brylinski C, Ferro G Thin Solid Films, 548, 125, 2013 |
| 3 |
Conductance deep-level transient spectroscopy study of 1 mu m gate length 4H-SiC MESFETs Gassoumi M, Bluet JM, Dermoul I, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C Solid-State Electronics, 50(2), 214, 2006 |
| 4 |
Hole-like Defects in n-Channel 4H-SIC MESFETs Observed by Current Transient Spectroscopy Bluet JM, Gassoumi M, Dermoul I, Chekir F, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C Materials Science Forum, 483, 865, 2005 |
| 5 |
Room temperature implantation and activation kinetics of nitrogen and phosphorus in 4H-SiC crystals. Blanque S, Perez R, Godignon P, Mestres N, Morvan E, Kerlain A, Dua C, Brylinski C, Zielinski M, Camassel J Materials Science Forum, 457-460, 893, 2004 |
| 6 |
Effect of passivation on device stability and gate reverse characteristics on 4H-SiC MESFETs Kerlain A, Morvan E, Dua C, Caillas N, Brylinski C Materials Science Forum, 457-460, 1177, 2004 |
| 7 |
Deep level investigation by current and capacitance transient spectroscopy in 4H-SiC MESFETs on semi-insulating substrates. Gassoumi M, Sghaier N, Dermoul I, Chekir F, Maaref H, Bluet JM, Guillot G, Morvan E, Noblanc O, Dua C, Brylinski C Materials Science Forum, 457-460, 1185, 2004 |
| 8 |
Influence of semi-insulating substrate purity on the output characteristics of 4H-SiC MESFETs Sghaier N, Bluet JM, Souifi A, Guillot G, Morvan E, Brylinski C Materials Science Forum, 389-3, 1363, 2002 |
| 9 |
Hot-carrier luminescence in 4H-SiC MESFETs Banc C, Bano E, Ouisse T, Noblanc O, Brylinski C Materials Science Forum, 389-3, 1371, 2002 |
| 10 |
Influence of material properties on wide-bandgap microwave power device characteristics Morvan E, Kerlain A, Dua C, Brylinski C Materials Science Forum, 433-4, 731, 2002 |