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| No. | Article |
|---|---|
| 1 |
Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition Stoklas R, Gregusova D, Hasenohrl S, Brytavskyi E, Tapajna M, Frohlich K, Hascik S, Gregor M, Kuzmik J Applied Surface Science, 461, 255, 2018 |