검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy Negri M, Bosi M, Orsi D, Rimoldi T, Attolini G, Buffagni E, Ferrari C, Cristofolini L, Salviati G Journal of Materials Science, 52(16), 9787, 2017 |
| 2 |
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor Attolini G, Ponraj JS, Frigeri C, Buffagni E, Ferrari C, Musayeva N, Jabbarov R, Bosi M Applied Surface Science, 360, 157, 2016 |
| 3 |
Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD Boschi F, Bosi M, Berzina T, Buffagni E, Ferrari C, Fornari R Journal of Crystal Growth, 443, 25, 2016 |
| 4 |
Achieving Giant Magnetically Induced Reorientation of Martensitic Variants in Magnetic Shape-Memory Ni-Mn-Ga Films by Microstructure Engineering Ranzieri P, Campanini M, Fabbrici S, Nasi L, Casoli F, Cabassi R, Buffagni E, Grillo V, Magen C, Celegato F, Barrera G, Tiberto P, Albertini F Advanced Materials, 27(32), 4760, 2015 |
| 5 |
Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates Bosi M, Attolini G, Negri M, Frigeri C, Buffagni E, Ferrari C, Rimoldi T, Cristofolini L, Aversa L, Tatti R, Verucchi R Journal of Crystal Growth, 383, 84, 2013 |