화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Self-aligned double patterning process for subtractive Ge fin fabrication at 45-nm pitch
Milenin AP, Witters L, Barla K, Thean A
Thin Solid Films, 602, 64, 2016
2 A pragmatic design methodology using proper isolation and doping for bulk FinFETs
Liao YB, Chiang MH, Lai YS, Hsu WC
Solid-State Electronics, 85, 48, 2013
3 Charge based DC compact modeling of bulk FinFET transistor
Cerdeira A, Garduno I, Tinoco J, Ritzenthaler R, Franco J, Togo M, Chiarella T, Claeys C
Solid-State Electronics, 87, 11, 2013
4 Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi A, Kubicek S, Rooyackers R, Kim MS, Sleeckx E, Devriendt K, Shamiryan D, Vandeweyer T, Delande T, Horiguchi N, Togo M, Wouters JMD, Jurczak M, Hoffmann T, Cockburn A, Gravey V, Diehl DL
Solid-State Electronics, 71, 106, 2012
5 Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella T, Witters L, Mercha A, Kerner C, Rakowski M, Ortolland C, Ragnarsson LA, Parvais B, De Keersgieter A, Kubicek S, Redolfi A, Vrancken C, Brus S, Lauwers A, Absil P, Biesemans S, Hoffmann T
Solid-State Electronics, 54(9), 855, 2010