화학공학소재연구정보센터
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No. Article
1 Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires
Lari L, Walther T, Gass MH, Geelhaar L, Cheze C, Riechert H, Bullough TJ, Chalker PR
Journal of Crystal Growth, 327(1), 27, 2011
2 Thermal stability of C-doped GaAs/AlAs DBR structures
Liang MS, Bullough TJ, Joyce TB
Solid-State Electronics, 52(8), 1256, 2008
3 Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs
Bullough TJ, Davies S, Thomas S, Joyce TB, Chalker PR
Solid-State Electronics, 47(3), 407, 2003
4 Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well
White SL, Thomas S, Joyce TB, Bullough TJ, Chalker PR, Noakes TCQ, Bailey P, Mazzucato S, Balkan N
Solid-State Electronics, 47(3), 425, 2003
5 Optical properties of GaInNAs/GaAs quantum wells
Mazzucato S, Erol A, Potter RJ, Balkan N, Chalker PR, Thomas S, Joyce TB, Bullough TJ
Solid-State Electronics, 47(3), 483, 2003
6 Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Chalker PR, Davock H, Thomas S, Joyce TB, Bullough TJ, Potter RJ, Balkan N
Journal of Crystal Growth, 233(1-2), 1, 2001
7 Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE
Hill D, Farrell T, Bullough TJ
Thin Solid Films, 343-344, 554, 1999